Buffer Design to Minimize Current Collapse in GaN/AlGaN HFETs
نویسندگان
چکیده
منابع مشابه
Cryogenic Investigation of Current Collapse in AlGaN/GaN HFETS
Current collapse in AlGaN/GaN HFETs is investigated at low temperatures using a transient current monitoring technique. The carrier trapping and detrapping mechanisms are studied, and two distinct relaxation mechanisms are observed. They are associated to the presence of two close deep energy levels in the bandgap.
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A portion of this research was undertaken as part of the Ptolemy project, which is supported by the Advanced Research Projects Agency and the U. S. Air Force (under the RASSP program, contract F33615-93-C-1317), Semiconductor Research Corporation (project 94-DC-008), National Science Foundation (MIP-9201605), Office of Naval Technology (via Naval Research Laboratories), the State of California ...
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ژورنال
عنوان ژورنال: IEEE Transactions on Electron Devices
سال: 2012
ISSN: 0018-9383,1557-9646
DOI: 10.1109/ted.2012.2216535